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Frontiers of III-V Compounds and Devices
GA043202.pdf
(Joachim Würfl
Michael Schlechtweg
The paper presents an overview on the European status of electronic devices for micro- and mmwave applications based on III/V compound semiconductors. Both low noise and power devices for applications from a few GHz up to several hundred GHz are considered in terms of specific material and processing technologies and of typical device results. This includes a survey on the actual status of GaAs based HEMT and HBT devices, metamorphic HEMT devices. Furthermore recent results on high speed InP based HEMTs and HBTs are summarized. Regarding power applications the potentials of mature GaAs HBT technologies, power HEMTs and novel GaN technologies are discussed and compared to each other.
October 2004
